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Proceedings Paper

Material development for high-throughput nanoimprint lithography
Author(s): Kei Kobayashi; Takayuki Nakamura; Hirokazu Kato; Masayuki Hatano; Hiroshi Tokue; Tetsuro Nakasugi; Eun Hyuk Choi; Wooyung Jung; Takuya Kono
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Paper Abstract

Nanoimprint lithography (NIL) is a candidate of alternative lithographic technology for memory devices. We are developing NIL technology and challenging critical issues such as defectivity, overlay, and throughput . NIL material is a key factor to support the robust patterning process. Especially, resist material can play an important role in addressing the issue of the total throughput performance. The aim of this research is to clarify key factors of resist property which can reduce resist filling time and template separation time . The liquid resist is filled in the relief patterns on a quartz template surface and subsequently cured under UV radiation. The filling time is a bottleneck of NILthroughput. We have clarified that the air trapping in the liquid resist is critical. Based on theoretical study, we have identified key factors of NIL-resist property. These results have provided a deeper insight into resist material for high throughput NIL.

Paper Details

Date Published: 21 March 2018
PDF: 8 pages
Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841F (21 March 2018); doi: 10.1117/12.2297307
Show Author Affiliations
Kei Kobayashi, Toshiba Memory Corp. (Japan)
Takayuki Nakamura, Toshiba Memory Corp. (Japan)
Hirokazu Kato, Toshiba Memory Corp. (Japan)
Masayuki Hatano, Toshiba Memory Corp. (Japan)
Hiroshi Tokue, Toshiba Memory Corp. (Japan)
Tetsuro Nakasugi, Toshiba Memory Corp. (Japan)
Eun Hyuk Choi, SK Hynix, Inc. (Korea, Republic of)
Wooyung Jung, SK Hynix, Inc. (Korea, Republic of)
Takuya Kono, Toshiba Memory Corp. (Japan)

Published in SPIE Proceedings Vol. 10584:
Novel Patterning Technologies 2018
Eric M. Panning, Editor(s)

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