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Proceedings Paper

Enhancement of ArF immersion scanner system for advanced device node manufacturing
Author(s): Yujiro Hikida; Akira Hayakawa; Yoshihiro Teshima; Tomonori Dosho; Noriaki Kasai; Yasushi Yoda; Kazuo Masaki; Yuichi Shibazaki
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Paper Abstract

In order to meet the industry’s increasingly demanding requirements, especially in the area of improving pattern edge placement error for multiple patterning processes, we have developed the leading edge NSR-S635E ArF immersion scanner. The NSR-S635E delivers marked enhancements in scanner performance compared to the previous generation system, and provides expanded alignment capacity with a groundbreaking system called the inline Alignment Station (iAS) [1]. In this paper, we introduce the details of the NSR-S635E, including iAS, and demonstrate their capabilities for solving production challenges now and in the future.

Paper Details

Date Published: 20 March 2018
PDF: 11 pages
Proc. SPIE 10587, Optical Microlithography XXXI, 105870X (20 March 2018); doi: 10.1117/12.2297302
Show Author Affiliations
Yujiro Hikida, Nikon Corp. (Japan)
Akira Hayakawa, Nikon Corp. (Japan)
Yoshihiro Teshima, Nikon Corp. (Japan)
Tomonori Dosho, Nikon Corp. (Japan)
Noriaki Kasai, Nikon Corp. (Japan)
Yasushi Yoda, Nikon Corp. (Japan)
Kazuo Masaki, Nikon Corp. (Japan)
Yuichi Shibazaki, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 10587:
Optical Microlithography XXXI
Jongwook Kye, Editor(s)

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