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Desirable material selection on self-aligned multi-patterning
Author(s): Kyohei Koike; Kazuki Yamada; Masatoshi Yamato; Hidetami Yaegashi; Takehiro Seshimo; Takahiro Dazai; Katsumi Ohmori
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Paper Abstract

For self-aligned multiple patterning, higher etch selectivity between mandrel and spacer is desired to lessen roughness, and thereby prevent pitch walk. We selected dual carbon layers as mandrels and silicon oxide films as spacers for a new self-aligned quadruple patterning process since they potentially provide infinite etch selectivity. We gained insolubility and etch selectivity between two carbon layers by infiltrating trimethylsilyldimethylamine into one of the carbon layers under the ambient atmosphere. Significantly, neither necking nor recess were observed when the spin-on-glass antireflective coating was removed. Thus, a SAQP scheme was developed and successfully demonstrated a sub15-nm halfpitch pattern. Additionally, this scheme improves affordability since all the processes can be performed in the ambient pressure within a coater module.

Paper Details

Date Published: 13 March 2018
PDF: 8 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105861F (13 March 2018); doi: 10.1117/12.2297297
Show Author Affiliations
Kyohei Koike, Tokyo Electron Kyusyu Ltd, (Japan)
Kazuki Yamada, Tokyo Electron Ltd. (Japan)
Masatoshi Yamato, Tokyo Electron Miyagi Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)
Takehiro Seshimo, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takahiro Dazai, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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