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EUV metal oxide hybrid photoresists: ultra-small structures for high-resolution patterning
Author(s): Hong Xu; Kou Yang; Kazunori Sakai; Vasiliki Kosma; Kazuki Kasahara; Emmanuel P. Giannelis; Christopher K. Ober
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Paper Abstract

Extreme ultraviolet (EUV) lithography, using 13.5 nm radiation, is considered one of the most prominent candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap1. Over the past few years, our main effort has been to focus on ZrO2 and HfO2 nanoparticle-based photoresists. However, both Zr and Hf are relatively low EUV absorbing metals2, and integration of high EUV absorption elements is considered to be a more promising route to further improve lithographic performance under EUV radiation. Here, we demonstrate novel zinc oxide-based nanoparticle photoresists, possessing small particle size, good solubility in spin-coating solvents, good film-forming abilitie and patterning by incorporating a photo-acid generator or photo-radical generator.

Paper Details

Date Published: 19 March 2018
PDF: 6 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831P (19 March 2018); doi: 10.1117/12.2297266
Show Author Affiliations
Hong Xu, Cornell Univ. (United States)
Kou Yang, Cornell Univ. (United States)
Kazunori Sakai, Cornell Univ. (United States)
JSR Corp. (Japan)
Vasiliki Kosma, Cornell Univ. (United States)
Kazuki Kasahara, Cornell Univ. (United States)
JSR Corp. (Japan)
Emmanuel P. Giannelis, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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