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Proceedings Paper

A holistic metrology sensitivity study for pattern roughness quantification on EUV patterned device structures with mask design induced roughness
Author(s): Shimon Levi; Ishai Swrtsband; Vladislav Kaplan; Ilan Englard; Kurt Ronse; Bogumila Kutrzeba-Kotowska ; Gaoliang Dai; Frank Scholze; Kenslea Anne; Hayley Johanesen; Laurens Kwakman; Igor Turovets; Maxim Rabinovitch; Sven Krannich; Nikolai Kasper; Brid Connolly; Romy Wende; Markus Bender
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Paper Abstract

Monitoring of pattern roughness for advanced technology nodes is crucial as this roughness can adversely affect device yield and degrade device performance. The main industry work horse for in-line roughness measurements is the CD-SEM, however, today no adequate reference metrology tools exist that allow to evaluate its roughness measurement sensitivity and precision. To bridge this gap, in this work the roughness measurement capabilities of different analytical techniques are investigated. Different metrology methods are used to evaluate roughness on a same set of samples and results are compared and used in a holistic approach to better characterize and quantify the measured pattern roughness. To facilitate the correlation between the various metrology techniques and the evaluation of CD-SEM sensitivity, an effective approach is to induce pattern roughness in a controlled way by adding well defined levels of roughness to the designed patterns on a EUV mask and to measure the response and sensitivity of CD-SEM and of the other techniques to these different pattern roughness levels once printed on wafers. This paper presents the roughness measurement results obtained with various metrology technologies including CD-SEM, OCD, S-TEM and XCD on EUV Lithography patterned wafers both postlithography and post-etch. The benefits of recently developed metrology enhancements are demonstrated as well; automated TEM allows to generate accurate and rather precise reference roughness data, Machine Learning enables OCD based roughness metrology with good correlation to CD-SEM and STEM, and the improved sensitivity of EUV and X-ray scattering systems allows to extract roughness information that does correlate to CD-SEM.

Paper Details

Date Published: 2 August 2018
PDF: 13 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058511 (2 August 2018); doi: 10.1117/12.2297265
Show Author Affiliations
Shimon Levi, Applied Materials, Ltd. (Israel)
Ishai Swrtsband, Applied Materials, Inc. (Israel)
Vladislav Kaplan, Applied Materials, Inc. (Israel)
Ilan Englard, Applied Materials Ltd. Israel (Israel)
Kurt Ronse, IMEC (Belgium)
Bogumila Kutrzeba-Kotowska , IMEC (Belgium)
Gaoliang Dai, Physikalisch-Technische Bundesanstalt (Germany)
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)
Kenslea Anne, FEI Co. (Netherlands)
Hayley Johanesen, FEI Co. (Netherlands)
Laurens Kwakman, FEI Co. (Netherlands)
Igor Turovets, Nova Measuring Instruments Ltd. (Israel)
Maxim Rabinovitch, NOVA (Israel)
Sven Krannich, Bruker JV (Israel)
Nikolai Kasper, Bruker JV (Israel)
Brid Connolly, Toppan Photomasks, Inc. (Germany)
Romy Wende, Toppan Photomasks, Inc. (Germany)
Markus Bender, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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