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Resist coating and developing process technology toward EUV manufacturing sub-7nm node
Author(s): Yuya Kamei; Takahiro Shiozawa; Shinichiro Kawakami; Hideo Shite; Hiroshi Ichinomiya; Yusaku Hashimoto; Masashi Enomoto; Kathleen Nafus; Akihiro Sonoda; Marc Demand; Philippe Foubert
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Paper Abstract

Extreme ultraviolet lithography (EUVL) is getting closer to practical use for mass production every year. For applying EUV lithography to manufacturing, productivity improvement is a critical challenge. Throughput and yield are important factors for productivity. EUV source power is steadily advancing year by year, bringing improvements in throughput. Furthermore, yield improvement is necessary for productivity enhancement. In order to improve the yield in EUV lithography processing, further improvement of defectivity and critical dimension (CD) uniformity is required. One of the initial layers to be printed with EUV will be contact hole, therefore, we are concentrating on the productivity improvements of that layer.

In our report at SPIE 2017, defect reduction was achieved using the latest rinse technology in the development process and in-film defectivity was improved with material dispense optimization on a 24 nm contact hole (CH) pattern. On the basis of the knowledge acquired from the previous evaluation, improvements have been taken a step further in this next evaluation. As a result, 96% of residue defect reduction and 42% of in -film particle defect reduction has been achieved by further rinse optimization and improvement of dispense system.

For the other aspect of yield improvement, CD uniformity control is one of the crucial factors. CD variations are comprised of several components such as wafer to wafer CD uniformity, field to field CD uniformity. To achieve CD uniformity target for manufacturing, we have optimized developing process with the latest technology. Then, 15% of field to field CD uniformity improvement and significant improvement of wafer to wafer CD uniformity are achieved.

Paper Details

Date Published: 19 March 2018
PDF: 7 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831V (19 March 2018); doi: 10.1117/12.2297203
Show Author Affiliations
Yuya Kamei, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Shiozawa, Tokyo Electron Kyushu Ltd. (Japan)
Shinichiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan)
Hideo Shite, Tokyo Electron Kyushu Ltd. (Japan)
Hiroshi Ichinomiya, Tokyo Electron Kyushu Ltd. (Japan)
Yusaku Hashimoto, Tokyo Electron Kyushu Ltd. (Japan)
Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan)
Kathleen Nafus, Tokyo Electron Kyushu Ltd. (Belgium)
Akihiro Sonoda, Tokyo Electron Kyushu Ltd. (Japan)
Marc Demand, Tokyo Electron Europe Ltd. (Belgium)
Philippe Foubert, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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