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Enabling proximity mask-aligner lithography with a 193nm CW light source
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Paper Abstract

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuration is frequency-quadrupled using lithiumtriborate and potassium-uoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions <2 µm printed with proximity gaps of 20 µm.

Paper Details

Date Published: 20 March 2018
PDF: 7 pages
Proc. SPIE 10587, Optical Microlithography XXXI, 105871F (20 March 2018); doi: 10.1117/12.2297171
Show Author Affiliations
Raoul Kirner, SUSS MicroOptics SA (Switzerland)
Andreas Vetter, SUSS MicroOptics SA (Switzerland)
Karlsruher Institut für Technologie (Germany)
Dmitrijs Opalevs, TOPTICA Photonics AG (Germany)
Matthias Scholz, TOPTICA Photonics AG (Germany)
Patrick Leisching, TOPTICA Photonics AG (Germany)
Toralf Scharf, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Wilfried Noell, SUSS MicroOptics SA (Switzerland)
Carsten Rockstuhl, Karlsruher Institut für Technologie (Germany)
Reinhard Voelkel, SUSS MicroOptics SA (Switzerland)


Published in SPIE Proceedings Vol. 10587:
Optical Microlithography XXXI
Jongwook Kye, Editor(s)

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