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Proceedings Paper

Monte Carlo simulation of edge placement error
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Paper Abstract

In the discussion of edge placement error (EPE), we proposed interactive pattern fidelity error (IPFE) as an indicator to judge pass/fail of integrated patterns. IPFE consists of lower and upper layer EPEs (CD and center of gravity: COG) and overlay, which is decided from the combination of each maximum variation. We succeeded in obtaining the IPFE density function by Monte Carlo simulation. In the results, we also found that the standard deviation (σ) of each indicator should be controlled by 4.0σ, at the semiconductor grade, such as 100 billion patterns per die. Moreover, CD, COG and overlay were analyzed by analysis of variance (ANOVA); we can discuss all variations from wafer to wafer (WTW), pattern to pattern (PTP), line edge roughness (LWR) and stochastic pattern noise (SPN) on an equal footing. From the analysis results, we can determine that these variations belong to which process and tools. Furthermore, measurement length of LWR is also discussed in ANOVA. We propose that the measurement length for IPFE analysis should not be decided to the micro meter order, such as >2 μm length, but for which device is actually desired.

Paper Details

Date Published: 13 March 2018
PDF: 11 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058529 (13 March 2018); doi: 10.1117/12.2297135
Show Author Affiliations
Shinji Kobayashi, Tokyo Electron Kyushu Ltd. (Japan)
Soichiro Okada, Tokyo Electron Kyushu Ltd. (Japan)
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Kathleen Nafus, Tokyo Electron America, Inc. (United States)
Carlos Fonseca, Tokyo Electron America, Inc. (United States)
Joel Estrella, Tokyo Electron America, Inc. (United States)
Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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