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Proceedings Paper

Novel EUV resist materials for 7 nm node and beyond
Author(s): Hajime Furutani; Michihiro Shirakawa; Wataru Nihashi; Kyohei Sakita; Hironori Oka; Mitsuhiro Fujita; Tadashi Omatsu; Toru Tsuchihashi; Nishiki Fujimaki; Toru Fujimori
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Paper Abstract

For semiconductor device manufacturing, line width roughness (LWR) and defect reduction is one of the most important items to obtain high yield. In this study we described the development of novel high absorption resists for use in extreme ultra violet (EUV) lithography system and its LWR and nano-bridge reduction capability. Herein decomposition rates of photo acid generator (PAG) and several high EUV absorption compounds were studied to clarify inefficient pass on acid generation mechanism. As a result, it is revealed that existence of decomposition pass on high EUV absorption compounds degenerates PAG decomposition efficiency. New high absorption materials were synthesized with taking into account its decomposition durability and its lithographic performance were investigated. 15-20% dose reduction keeping its LWR value and nano-bridge reduction were observed even at lower dose condition compared to non-high absorption platform.

Paper Details

Date Published: 13 March 2018
PDF: 9 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860G (13 March 2018); doi: 10.1117/12.2297076
Show Author Affiliations
Hajime Furutani, FUJIFILM Corp. (Japan)
Michihiro Shirakawa, FUJIFILM Corp. (Japan)
Wataru Nihashi, FUJIFILM Corp. (Japan)
Kyohei Sakita, FUJIFILM Corp. (Japan)
Hironori Oka, FUJIFILM Corp. (Japan)
Mitsuhiro Fujita, FUJIFILM Corp. (Japan)
Tadashi Omatsu, FUJIFILM Corp. (Japan)
Toru Tsuchihashi, FUJIFILM Corp. (Japan)
Nishiki Fujimaki, FUJIFILM Corp. (Japan)
Toru Fujimori, FUJIFILM Corp. (Japan)

Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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