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Contact inspection of Si nanowire with SEM voltage contrast
Author(s): Takeyoshi Ohashi; Atsuko Yamaguchi; Kazuhisa Hasumi; Masami Ikota; Gian Lorusso; Naoto Horiguchi
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Paper Abstract

A methodology to evaluate the electrical contact between nanowire (NW) and source/drain (SD) in NW FETs was investigated with SEM voltage contrast (VC). The electrical defects were robustly detected by VC. The validity of the inspection result was verified by TEM physical observations. Moreover, estimation of the parasitic resistance and capacitance was achieved from the quantitative analysis of VC images which were acquired with different scan conditions of electron beam (EB). A model considering the dynamics of EB-induce charging was proposed to calculate the VC. The resistance and capacitance can be determined by comparing the model-based VC with experimentally obtained VC. Quantitative estimation of resistance and capacitance would be valuable not only for more accurate inspection, but also for identification of the defect point.

Paper Details

Date Published: 13 March 2018
PDF: 11 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105850B (13 March 2018); doi: 10.1117/12.2296992
Show Author Affiliations
Takeyoshi Ohashi, Hitachi, Ltd. (Japan)
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Kazuhisa Hasumi, Hitachi High-Technologies Corp. (Japan)
Masami Ikota, Hitachi High-Technologies Corp. (Japan)
Gian Lorusso, IMEC (Belgium)
Naoto Horiguchi, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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