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Proceedings Paper

The method of optimizing mask parameter suitable for lithography process
Author(s): Jianfang He; Lisong Dong; Libin Zhang; Lijun Zhao; Yayi Wei; Tianchun Ye
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Paper Abstract

In the mask manufacturing process, the thickness and sidewall angle of mask are usually determined under the condition of vertical incidence. In fact, the incident angle of light on the mask plane is oblique, especially for the freeform source in source mask optimization (SMO). At this time, the thickness and sidewall angle of mask given by previous methods will not be optimal. This paper presents a method of optimizing mask parameters, which makes the transmittance and phase shift are more optimal for lithography process. In this paper, the influence of variations on mask parameters on lithography process is evaluated by the process window. And the process window corresponding to the optimal mask structure given by our method is larger than that of the original mask structure. The conclusion that the previous mask parameters are not the optimal for lithography process is demonstrated by the simulation results.

Paper Details

Date Published: 20 March 2018
PDF: 8 pages
Proc. SPIE 10587, Optical Microlithography XXXI, 1058719 (20 March 2018); doi: 10.1117/12.2296861
Show Author Affiliations
Jianfang He, Institute of Microelectronics (China)
Lisong Dong, Institute of Microelectronics (China)
Libin Zhang, Institute of Microelectronics (China)
Lijun Zhao, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Tianchun Ye, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10587:
Optical Microlithography XXXI
Jongwook Kye, Editor(s)

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