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Proceedings Paper

Fabrication and performance of a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O thin film detector
Author(s): Wei Zhou; Yiming Yin; Niangjuan Yao; Lin Jiang; Yue Qu; Jing Wu; Y. Q. Gao; Jingguo Huang; Zhiming Huang
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Paper Abstract

A thermal sensitive infrared and THz detector was fabricated by a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films. The Mn-Co-Ni-O material, as one type of transition metal oxides, has long been used as a candidate for thermal sensors or infrared detectors. The resistivity of a most important Mn-Co-Ni-O thin film, Mn1. 96Co0.96Ni0.48O4(MCN) , is about 200 Ω·cm at room temperature, which ranges about 2 orders larger than that of VOx detectors. Therefore, the thickness of a typical squared Mn-Co-Ni-O IR detector should be about 10 μm, which is too large for focal plane arrays applications. To reduce the resistivity of Mn-Co-Ni-O thin film, 1/6 of Co element was replaced by Cu. Meanwhile, a cover layer of MCN film was deposited onto the Mn-Co-Ni-Cu-O film to improve the long term stability. The detector fabricated by the double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films showed large response to blackbody and 170 GHz radiation. The NEP of the detector was estimated to be the order of 10-8 W/Hz0. 5. By applying thermal isolation structure and additional absorption materials, the detection performance can be largely improved by 1-2 orders according to numerical estimation. The double layered Mn-Co-Ni-O film detector shows great potentials in applications in large scale IR detection arrays, and broad-band imaging.

Paper Details

Date Published: 12 January 2018
PDF: 8 pages
Proc. SPIE 10623, 2017 International Conference on Optical Instruments and Technology: IRMMW-THz Technologies and Applications, 106230Q (12 January 2018); doi: 10.1117/12.2296348
Show Author Affiliations
Wei Zhou, State Key Lab. for Infrared Physics (China)
Yiming Yin, State Key Lab. for Infrared Physics (China)
Niangjuan Yao, State Key Lab. for Infrared Physics (China)
Lin Jiang, State Key Lab. for Infrared Physics (China)
Yue Qu, State Key Lab. for Infrared Physics (China)
Jing Wu, State Key Lab. for Infrared Physics (China)
Y. Q. Gao, State Key Lab. for Infrared Physics (China)
Jingguo Huang, State Key Lab. for Infrared Physics (China)
Zhiming Huang, State Key Lab. for Infrared Physics (China)


Published in SPIE Proceedings Vol. 10623:
2017 International Conference on Optical Instruments and Technology: IRMMW-THz Technologies and Applications
Cunlin Zhang; Xi-Cheng Zhang; Zhiming Huang; Liquan Dong, Editor(s)

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