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Numerical analysis of nanowire surface recombination using a three-dimensional transient model
Author(s): Dingkun Ren; Zixuan Rong; Baolai Liang; Diana L. Huffaker
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Paper Abstract

To characterize surface recombination of nanowires, time-resolved photoluminescence (TRPL) is commonly implemented to correlate measured lifetime with the nonradiative effect at surface. In this work, we develop a threedimensional transient model to perform a numerical analysis of surface recombination for InGaAs nanowires on GaAs substrates. By mimicking a complete TRPL measurement process, we computationally calculate optical generation and emission of InGaAs nanowires, and numerically probe the carrier dynamics inside nanowires. It is found that the TRPL spectra are determined by a complex convolution of surface recombination velocity and incident wavelengths. In addition, we show that due to the three-dimensional geometry of nanowire, using a typical analytical equation to extract surface recombination velocity might be no longer valid. We believe these results provide an alternative approach for the computational analysis of TRPL measurements and surface properties for three-dimensional nanostructured devices.

Paper Details

Date Published: 21 February 2018
PDF: 7 pages
Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 1054306 (21 February 2018); doi: 10.1117/12.2295768
Show Author Affiliations
Dingkun Ren, Univ. of California, Los Angeles (United States)
Zixuan Rong, Univ. of California, Los Angeles (United States)
Baolai Liang, California NanoSystems Institute, Univ. of California, Los Angeles (United States)
Diana L. Huffaker, Univ. of California, Los Angeles (United States)
California NanoSystems Institute, Univ. of California, Los Angeles (United States)
Cardiff Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 10543:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV
Diana L. Huffaker; Holger Eisele, Editor(s)

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