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Proceedings Paper

Study of the thermal-induced intensity balanced Nd:GdVO4 microchip dual-frequency laser
Author(s): Meiling Cai; Miao Hu; Xuefang Zhou; Yang Lu; Ran Zeng; Qiliang Li; Yizhen Wei
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Paper Abstract

The intensity balance ratio (IBR) tuning mechanism of Nd:GdVO4 monolithic microchip dual-frequency laser (DFL) is presented. The intensity balanced DFL signals are obtained by precisely controlling the heat sink temperature of the Nd:GdVO4 crystal. In experiments, the DFL signal with frequency separation at 64 GHz and IBR above 0.99 is realized with the temperature at 47.6 °C. The other balanced intensity distribution can be reached at -0.9 °C before mode hopping. Moreover, utilizing the fluorescence spectrum and the intensity balance points of Nd:GdVO4 DFL, we obtain the temperature difference between internal and external of Nd:GdVO4 crystal ΔT = 24.0 °C.

Paper Details

Date Published: 10 January 2018
PDF: 6 pages
Proc. SPIE 10617, 2017 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Optical Signal Processing, 1061706 (10 January 2018); doi: 10.1117/12.2295569
Show Author Affiliations
Meiling Cai, Hangzhou Dianzi Univ. (China)
Miao Hu, Hangzhou Dianzi Univ. (China)
Xuefang Zhou, Hangzhou Dianzi Univ. (China)
Yang Lu, Hangzhou Dianzi Univ. (China)
Ran Zeng, Hangzhou Dianzi Univ. (China)
Qiliang Li, Hangzhou Dianzi Univ. (China)
Yizhen Wei, Hangzhou Dianzi Univ. (China)


Published in SPIE Proceedings Vol. 10617:
2017 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Optical Signal Processing
Liquan Dong; Yi Dong; Jian Chen; Fabien Bretenaker, Editor(s)

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