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Response time of semiconductor photodiodes
Author(s): Andrew C. Harter; Alexander O. Goushcha; Bernd Tabbert
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Paper Abstract

The conventional phenomenological approach describes the response time of semiconductor photodiodes to short laser pulses as time required for collection of non-equilibrium carriers via processes of drift and diffusion. The effect of displacement currents due to dielectric relaxation of majority carriers in the charge-neutral region of semiconductor photodiode is usually neglected. This paper shows that dielectric relaxation of majority carriers may dominate the slow response of not fully depleted photodiodes and has to be taken into account for correct analysis of silicon photodiode response to a brief laser pulse. A phenomenological expression for the photodiode response time that accounts for the displacement current effects is proposed and used to compare with experimental results.

Paper Details

Date Published: 23 February 2018
PDF: 8 pages
Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105261L (23 February 2018); doi: 10.1117/12.2294960
Show Author Affiliations
Andrew C. Harter, Luna Optoelectronics (United States)
Alexander O. Goushcha, Luna Optoelectronics (United States)
Bernd Tabbert, Luna Optoelectronics (United States)


Published in SPIE Proceedings Vol. 10526:
Physics and Simulation of Optoelectronic Devices XXVI
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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