Share Email Print
cover

Proceedings Paper

Low temperature electrodeposition of silicon layers
Author(s): Thierry Pauporté; Shuo Qi ; Bruno Viana
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The electrodeposition of silicon at room temperature in 1-Butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide and N-Propyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquids containing SiCl4 salt is shown. The electrodeposition window has been determined by cyclic voltammetry. Layers have been deposited in a three electrode cell placed in an inert atmosphere and at constant applied potential. The characterizations by x-ray diffraction and Raman spectroscopy showed the formation of a layer made of amorphous silicon. The scanning electron microscopy examination revealed that the layers were featureless and well-covering.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332S (23 February 2018); doi: 10.1117/12.2294944
Show Author Affiliations
Thierry Pauporté, Institut de Recherche Chimie-Paris, CNRS, PSL Research Univ. (France)
Shuo Qi , Institut de Recherche Chimie-Paris, CNRS, PSL Research Univ. (France)
Bruno Viana, Institut de Recherche Chimie-Paris, CNRS, PSL Research Univ. (France)


Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

© SPIE. Terms of Use
Back to Top