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Proceedings Paper

Low temperature electrodeposition of silicon layers
Author(s): Thierry Pauporté; Shuo Qi ; Bruno Viana
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Paper Abstract

The electrodeposition of silicon at room temperature in 1-Butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide and N-Propyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquids containing SiCl4 salt is shown. The electrodeposition window has been determined by cyclic voltammetry. Layers have been deposited in a three electrode cell placed in an inert atmosphere and at constant applied potential. The characterizations by x-ray diffraction and Raman spectroscopy showed the formation of a layer made of amorphous silicon. The scanning electron microscopy examination revealed that the layers were featureless and well-covering.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332S (23 February 2018); doi: 10.1117/12.2294944
Show Author Affiliations
Thierry Pauporté, Institut de Recherche Chimie-Paris, CNRS, PSL Research Univ. (France)
Shuo Qi , Institut de Recherche Chimie-Paris, CNRS, PSL Research Univ. (France)
Bruno Viana, Institut de Recherche Chimie-Paris, CNRS, PSL Research Univ. (France)

Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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