Share Email Print

Proceedings Paper

Optoelectronic bistability at low temperature avalanche breakdown in GaAs epitaxial films
Author(s): O. A. Ryabushkin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The object of this report is a new type of optoelectronic bistability in n-GaAs epitaxial films at helium temperatures based on the phenomenon of low-temperature impurity breakdown. The bistability mechanism is related with the following two factors: 1. The films possess an S-shaped current-voltage characteristic (CVC) that is light-sensetive (Fig. 1) [ 1] . Light illumination changes the characteristic point Ith, Vao I., V. of the CVC which limit the region of negative differential resistence, here Ith, Va-current and voltage of the threshold points, I., Vi--those of the sustaining points. Under photoexcitation Vlh falls to the value Vtia and Tot increases to Ina . This property of the CVC allows to realize the light-induced electric switching when the external circuit is properly chosen. . _ .•

Paper Details

Date Published: 4 December 2017
PDF: 3 pages
Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 123073 (4 December 2017); doi: 10.1117/12.2294892
Show Author Affiliations
O. A. Ryabushkin, Institute of Radio Engineering and Electronics (Russian Federation)

Published in SPIE Proceedings Vol. 1230:
International Conference on Optoelectronic Science and Engineering '90
DaHeng Wang, Editor(s)

© SPIE. Terms of Use
Back to Top