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Proceedings Paper

Optical bistability in silicon on sapphire thermo-optical seed element
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Paper Abstract

We present optical bistability in silicon on sapphire (SOS) thermooptical SEED structures at a visible wavelength of A = 514nm. Theoretical analysis and experimental results show that bistability is due to increasing absorption and thermally induced change of the internal resistance.

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Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, ; doi: 10.1117/12.2294883
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Published in SPIE Proceedings Vol. 1230:
International Conference on Optoelectronic Science and Engineering '90

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