Share Email Print
cover

Proceedings Paper

A phased array laser made of GaAs/GaAlAs graded barrier single quantum well structure
Author(s): Longde Zhu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A phased array laser made of MOCVD-grown GaAs / GaAlAs graded barrier separate confinement heterostructure single quantum well (GBSC SQW) wafer was investigated. The threshold current of the array composed of ten ridge waveguide lasers was 67mA, linear output power was more than 500mW, and the external differential quantum efficiency was 60%. The configuration of the array is consisted of strongly coupling central region and weakly coupling mirror regions, and the effect of the geometrical configuration of the strongly coupling region on the coupled array supermode was examined.

Paper Details

Date Published: 1 July 1990
PDF: 3 pages
Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12303N (1 July 1990); doi: 10.1117/12.2294768
Show Author Affiliations
Longde Zhu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 1230:
International Conference on Optoelectronic Science and Engineering '90
DaHeng Wang, Editor(s)

© SPIE. Terms of Use
Back to Top