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Proceedings Paper

Fabrication and characteristics of 1.3 Urn InGaAsp-InP large optical cavity lasers
Author(s): Jingchang Zhong
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Paper Abstract

Analysing in InGaAsP-InP semiconductor lasers the effects of carrier leakage, non-radiative Auger electron process, inter-valence-band absorption as well as lattice mismatch on lasing characteristics, we have successfully designed and perfectly grown by a modified LPE technique a large optical cavity (LOC) structure in order to obtain the 1. 3 u m InGaAsP-InP lasers with low threshold current density, high output power and high characteristic temperature (To). We have also optimized the LPE procedure and diode-making process which accrue benefits in improving performances of, the devices. The lasers exhibit fairly low threshold current density 5 KA / cm for broad area devices), high output power (up to 3 W in pulsed operation) with high external differential quantum efficiency and high characteristic temperature (T0=150K). It is evident that the quaternary system LOC structure provides a laser which is superior to a conventional DH device.

Paper Details

Date Published: 1 July 1990
PDF: 3 pages
Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12303A (1 July 1990); doi: 10.1117/12.2294755
Show Author Affiliations
Jingchang Zhong, Changchun College of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1230:
International Conference on Optoelectronic Science and Engineering '90
DaHeng Wang, Editor(s)

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