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Proceedings Paper

Optical gain in GaAs/GaAlAs graded-index separate confinement single quantum well heterostructures
Author(s): Glen A. B. Feak
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Paper Abstract

Results of investigations on the dependence of the gain spectra, their polarization properties, and their peak emission values, on both the quantum well width and injection current are presented for single mode GaAs/AlGaAs graded-index separate confinement heterostructure single quantum well (GRINSCH SQW) lasers. Further, the relationships between the laser parameters critical to lasing with the n = 1 subband transitions are analyzed in terms of the material optical gain of the quantum well.

Paper Details

Date Published: 1 July 1990
PDF: 5 pages
Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12302X (1 July 1990); doi: 10.1117/12.2294742
Show Author Affiliations
Glen A. B. Feak, The Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 1230:
International Conference on Optoelectronic Science and Engineering '90
DaHeng Wang, Editor(s)

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