Share Email Print
cover

Proceedings Paper

Dark-current of field-assisted GaAs semiconductor photocathodes
Author(s): Jinmin Li
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The dark-current of GaAs field-assisted photocathodes with red and near infrared response is larger than that of common GaAs photocathodes. The major source of dark- current of the photocathodes is impact ionization of hot holes in high field deple- tion region. In this paper, a model and creating mechanism of impact ionization in the photocathodes is described in detail, and a specific expression of the dark-curren of the photocathodes at different operation conditions can be predicted once the appro- priate parameters have been determined. It may be helpful to design a field-assisted photocathode and choose an optimum operation condition.

Paper Details

Date Published: 1 July 1990
PDF: 3 pages
Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12300F (1 July 1990); doi: 10.1117/12.2294652
Show Author Affiliations
Jinmin Li, Xi'an Institute of Optics and Precision Mechanics (China)


Published in SPIE Proceedings Vol. 1230:
International Conference on Optoelectronic Science and Engineering '90
DaHeng Wang, Editor(s)

© SPIE. Terms of Use
Back to Top