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Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy
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Paper Abstract

An in situ resist dissolution analysis of a ZrOx-based metal resist in a typical organic solvent developer [e.g., normal butyl acetate (nBA)] revealed three types of dissolution behaviors: “nano-swelling” at the film surface, “nonuniform dissolution” in the mid-film region, and “resist residue” at the bottom. Attributed to the presence of metal resist film depth inhomogeneities, these dissolution behaviors can impact the EUVL imaging performance of the metal resists. Based on the results obtained, it was also found that developer polarity plays a significant role in obtaining a more uniform or stable dissolution characteristic for metal resists.

Paper Details

Date Published: 13 March 2018
PDF: 6 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860F (13 March 2018); doi: 10.1117/12.2294585
Show Author Affiliations
Julius Joseph Santillan, EUVL Infrastructure Development Ctr., Inc. (Japan)
Toshiro Itani, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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