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Proceedings Paper

Photoconductivity of ZnS and ZnSe
Author(s): B. E. Mason
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Paper Abstract

ZnS and ZnSe are important materials for laser windows and optical thin- film coatings. Understanding the laser-induced damage mechanism in optical materials provides the ability to make improved damage-resistant materials. Photoconductivity (PC) techniques have demonstrated the capability to provide information on carrier production that can lead to electron avalanche by single or multiple photon absorption processes produced by a high-intensity laser beam. A study of the linear PC using a monochromated Xe lamp and the nonlinear PC using various lasers as excitation sources will be presented for chemically vapor-deposited ZnS and ZnSe.

Paper Details

Date Published: 1 November 1990
PDF: 8 pages
Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14381M (1 November 1990); doi: 10.1117/12.2294467
Show Author Affiliations
B. E. Mason, Naval Weapons Ctr. (United States)

Published in SPIE Proceedings Vol. 1438:
Laser-Induced Damage in Optical Materials 1989
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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