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Proceedings Paper

Optical damage on SiO2 cavity mirrors produced by high-power VUV laser irradiation
Author(s): Y. Takigawa
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Paper Abstract

We report observation results about damages on SiO2 mirror surfaces. The damages were made when the mirrors were used as a cavity reflector for the Ar and Kr excimer lasers. The surface profile, transmission and reflectance spectra, and X-ray photoelectron spectra show that bulk Si is isolated in the surface layer which was exposed to 9.8eV photons from the Ar excimer laser. The Kr excimer laser, whose photon energy is 8.5eV, does not induce such a phenomenon. The Ar excimer laser photons, surmounting the fundamental band gap of 5i02, 9eV, are considered to create high density excitons that induce the Si-0 bond breaking and Si isolation.

Paper Details

Date Published: 1 November 1990
PDF: 11 pages
Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14380S (1 November 1990); doi: 10.1117/12.2294437
Show Author Affiliations
Y. Takigawa, Osaka Electro-Communication Univ. (Japan)

Published in SPIE Proceedings Vol. 1438:
Laser-Induced Damage in Optical Materials 1989
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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