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Proceedings Paper

Laser-induced damage to silicon photosensor arrays
Author(s): Chen-Zhi Zhang
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Paper Abstract

Laser-induced damage in two types of silicon photosensor array has been studied. The samples were MOS CCD time delay integration (TDI) sensors with a 2048x96 element array of pixels and CID photodiode arrays of 512x1 pixels. The laser source was a Q-switched 1064 nm Nd:YAG laser (10 Hz rep rate, 10 ns pulses with a 250 µm spot radius). Tests for morphological and electrical damage to the CCD arrays have been reported previously. In new experiments, the micro-damage morphology is examined and correlated with both the observed electrical degradation and newly observed stress effects. We report the observation of surface deformation and lattice defects due to laser-induced stresses in the SiO2 and poly-silicon thin films on the silicon substrate. Measurements of damage for the CID arrays show them to be more resistant to laser damage than MOS structures such as CCD arrays. In addition, electrical degradation of these arrays was observed which affected the video output signal from the devices.

Paper Details

Date Published: 1 November 1990
PDF: 11 pages
Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14380C (1 November 1990); doi: 10.1117/12.2294421
Show Author Affiliations
Chen-Zhi Zhang, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 1438:
Laser-Induced Damage in Optical Materials 1989
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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