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Advancements of ultra-high peak power laser diode arrays
Author(s): D. Crawford; P. Thiagarajan; J. Goings; B. Caliva; S. Smith; R. Walker
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Paper Abstract

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Paper Details

Date Published: 19 February 2018
PDF: 10 pages
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140H (19 February 2018); doi: 10.1117/12.2294046
Show Author Affiliations
D. Crawford, Lasertel, Inc. (United States)
P. Thiagarajan, Lasertel, Inc. (United States)
J. Goings, Lasertel, Inc. (United States)
B. Caliva, Lasertel, Inc. (United States)
S. Smith, Lasertel, Inc. (United States)
R. Walker, Lasertel, Inc. (United States)

Published in SPIE Proceedings Vol. 10514:
High-Power Diode Laser Technology XVI
Mark S. Zediker, Editor(s)

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