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Optical properties of doped GaN (Conference Presentation)
Author(s): Axel Hoffmann; Christian Nenstiel; Markus Wagner; Felix Nippert; Gordon Callsen; Nadja Jankowski; Armin Dadgar; Stacia Keller

Paper Abstract

In this paper the properties of excitons and phonons in doped GaN is reviewed. We demonstrate that in heavy Ge doped GaN new quasi particle can be stabilized. Furthermore, we discuss and use the observation of local phonon modes to clarify the incorporation of germanium, silicon, carbon, and transition metal ions on different lattice places in the nitride material.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320M (14 March 2018); doi: 10.1117/12.2293824
Show Author Affiliations
Axel Hoffmann, Technische Univ. Berlin (Germany)
Christian Nenstiel, Technische Univ. Berlin (Germany)
Markus Wagner, Technische Univ. Berlin (Germany)
Felix Nippert, Technische Univ. Berlin (Germany)
Gordon Callsen, Technische Univ. Berlin (Germany)
Nadja Jankowski, Technische Univ. Berlin (Germany)
Armin Dadgar, Otto-von-Guericke-Univ. Magdeburg (Germany)
Stacia Keller, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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