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Progress in beta-gallium-oxide materials and devices (Conference Presentation)
Author(s): James S. Speck
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Paper Abstract

In this talk, we provide an overview overview of our work on beta-Ga2O3 growth, doping, heterostructures and devices. In plasma-assisted MBE growth of beta-Ga2O3 we demonstrate the differences in growth on cleavage (e.g., (100) vs. non-cleavage planes (e.g., (010) or (001)), the propensity for growth rate limitations by suboxide formation. We demonstrate unintentional doping concentration in the mid10E15 cm-3 range, and controllable intentional doping with electron concentrations from 10E16 to >10E20 cm-3. We review the development and characterization of coherent (Al,Ga)2O3/Ga2O3 heterostructures and demonstration of modulation doping and MODFETs.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10533, Oxide-based Materials and Devices IX, 1053307 (14 March 2018); doi: 10.1117/12.2292778
Show Author Affiliations
James S. Speck, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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