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Proceedings Paper

Latest progress in gallium-oxide electronic devices
Author(s): Masataka Higashiwaki; Man Hoi Wong; Keita Konishi; Yoshiaki Nakata; Chia-Hung Lin; Takafumi Kamimura; Lingaparthi Ravikiran; Kohei Sasaki; Ken Goto; Akinori Takeyama; Takahiro Makino; Takeshi Ohshima; Akito Kuramata; Shigenobu Yamakoshi; Hisashi Murakami; Yoshinao Kumagai
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Paper Abstract

Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330O (23 February 2018); doi: 10.1117/12.2292666
Show Author Affiliations
Masataka Higashiwaki, National Institute of Information and Communications Technology (Japan)
Man Hoi Wong, National Institute of Information and Communications Technology (Japan)
Keita Konishi, Tokyo Univ. of Agriculture and Technology (Japan)
National Institute of Information and Communications Technology (Japan)
Yoshiaki Nakata, National Institute of Information and Communications Technology (Japan)
Chia-Hung Lin, National Institute of Information and Communications Technology (Japan)
Takafumi Kamimura, National Institute of Information and Communications Technology (Japan)
Lingaparthi Ravikiran, National Institute of Information and Communications Technology (Japan)
Kohei Sasaki, Tamura Corp. (Japan)
Ken Goto, Tamura Corp. (Japan)
Tokyo Univ. of Agriculture and Technology (Japan)
Akinori Takeyama, National Institutes for Quantum and Radiological Science and Technology (Japan)
Takahiro Makino, National Institutes for Quantum and Radiological Science and Technology (Japan)
Takeshi Ohshima, National Institutes for Quantum and Radiological Science and Technology (Japan)
Akito Kuramata, Tamura Corp. (Japan)
Shigenobu Yamakoshi, Tamura Corp. (Japan)
Hisashi Murakami, Tokyo Univ. of Agriculture and Technology (Japan)
Yoshinao Kumagai, Tokyo Univ. of Agriculture and Technology (Japan)


Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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