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Advanced modulation format using silicon modulators in the O-band
Author(s): D. Pérez Galacho; L. Bramerie; C. Baudot; M. Chaibi; S. Messaoudène; N. Vulliet; L. Vivien; C. Peucheret; D. Marris-Morini
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Paper Abstract

This paper review our recent work on silicon modulators based on free carrier concentration, working in the O-band of optical communications (1260 nm - 1360 nm) for short distance applications. 25 Gbit/s OOK modulation is obtained using a driving voltage of 3.3 Vpp , and QPSK dual-drive Mach-Zehnder modulator (DDMZM) operating in the O-band is demonstrated for the first time.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 105351K (23 February 2018); doi: 10.1117/12.2291888
Show Author Affiliations
D. Pérez Galacho, Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud (France)
L. Bramerie, Lab. FOTON, CNRS, Univ. Rennes (France)
C. Baudot, STMicroelectronics (France)
M. Chaibi, Lab. FOTON, CNRS, Univ. Rennes (France)
S. Messaoudène, STMicroelectronics (France)
N. Vulliet, STMicroelectronics (France)
L. Vivien, Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud (France)
C. Peucheret, Lab. FOTON, CNRS, Univ. Rennes (France)
D. Marris-Morini, Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 10535:
Integrated Optics: Devices, Materials, and Technologies XXII
Sonia M. García-Blanco; Pavel Cheben, Editor(s)

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