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Microcavity III-V lasers monolithically grown on silicon
Author(s): B. Mayer; S. Mauthe; Y. Baumgartner; S. Wirths; J. Winniger; P. Staudinger; H. Schmid; M. Souza; L. Czornomaz; K. E. Moselund
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Paper Abstract

We will present our recent work on III-V micro-cavity lasers monolithically grown on silicon substrates. The III-V material is directly grown using Template-Assisted-Selective-Epitaxy (TASE) within oxide cavities patterned using conventional lithographic techniques on top of the silicon substrate. This allows for the local integration of single-crystal III-V active gain material. Two variations of this technique will be discussed; the direct growth of disc lasers and the two-step approach via a virtual substrate. Room temperature single-mode optically pumped lasing is achieved in GaAs micro-cavity lasers, and devices show a remarkably low shift of the lasing threshold (T0=170K) with temperature. Dependence on cavity geometry and pump power will be discussed.

Paper Details

Date Published: 26 January 2018
PDF: 6 pages
Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 105401D (26 January 2018); doi: 10.1117/12.2291735
Show Author Affiliations
B. Mayer, IBM Research - Zürich (Switzerland)
S. Mauthe, IBM Research - Zürich (Switzerland)
Y. Baumgartner, IBM Research - Zürich (Switzerland)
S. Wirths, IBM Research - Zürich (Switzerland)
J. Winniger, IBM Research - Zürich (Switzerland)
P. Staudinger, IBM Research - Zürich (Switzerland)
H. Schmid, IBM Research - Zürich (Switzerland)
M. Souza, IBM Research - Zürich (Switzerland)
L. Czornomaz, IBM Research - Zürich (Switzerland)
K. E. Moselund, IBM Research - Zürich (Switzerland)

Published in SPIE Proceedings Vol. 10540:
Quantum Sensing and Nano Electronics and Photonics XV
Manijeh Razeghi; Gail J. Brown; Jay S. Lewis; Giuseppe Leo, Editor(s)

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