Share Email Print
cover

Proceedings Paper

Luminescence of rare-earth ions in epitaxial fluoride layers
Author(s): Nikolai S. Sokolov; Nikolai Leopoldovich Yakovlev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Epitaxial fluoride layers (CaF2, SrF2 and CdF2) were grown and doped with rare- earth ions by means of molecular beam epitaxy. This technique allows creation of new fluoride heterostructures (including superlattices) with high level and controlled profile of doping. Photoluminescence spectra of divalent ions (Eu2+ and Sm2+) were used to study strains and stress relaxation in the films. In the structures grown by MBE one can observe effects which are not actual in bulk crystals. They are crossing of 4f6 and 4f55d levels of Sm2+ ions in CaF2 layers with tensile strain as high as 2%, new shape of inhomogeneously broadened Sm2+ zero phonon emission line in very thin CaF2 layers arising from modification of strain fields of defects near the surface, bleaching of photoluminescence of RE ions in thin CaF2:Sm2+ layers on Si(111) and in CdF2-CaF2:Eu2+ superlattices. Luminescence of trivalent ions (Nd3+ and Er3+) in CaF2 films is quenched at much higher concentration of the dopants than in bulk crystals. It makes these films very attractive for potential optoelectronic applications.

Paper Details

Date Published: 3 January 1996
PDF: 10 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229165
Show Author Affiliations
Nikolai S. Sokolov, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai Leopoldovich Yakovlev, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions

© SPIE. Terms of Use
Back to Top