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Hybrid InP-on-silicon photonic-crystal-based nanoamplifier (Conference Presentation)
Author(s): Francesco Manegatti; Dimitrios Fitsios; Dorian Sanchez; Rama Raj; Fabrice Raineri
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Paper Abstract

The rapid evolution of the silicon photonics platform has delivered a whole series of photonic integrated components and circuits, generating a critical need for on-chip power increase and preservation. In this paper, we present the design, fabrication and experimental evaluation of an InP-based electrically injected photonic crystal (PhC) nanoamplifier integrated on SOI waveguide circuitry for intra-chip communications. The principle of the device is based on the use of 2D line defect PhC waveguides made of InP-based materials, which are coupled to the SOI waveguide through optimized highly efficient adiabatic mode transformers. The InP-based slab incorporating a 400nm PIN junction, with 4 InGaAsP quantum wells emitting around 1.3µm, is drilled with PhCs so as to form a single mode waveguide at the operating wavelength. Die-to-die adhesive bonding of the InP heterostructure on SOI is performed and the nanoamplifiers are structured in the III-V layers using 2 levels of electron beam lithography followed by inductively coupled plasma etching. Through proper positioning of the metallic contacts on the sides of the structure, this particular electro-optical configuration allows for the efficient electrical injection of electron-hole pairs without inducing large optical losses. Specific efforts were made as well, so as to optimize the stimulated emission efficiency. The device operates at room temperature in a continuous wave regime at the 1.3μm window and exhibits a diode voltage threshold of around 0.6V. Detailed performance analysis of the device is presented.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10537, Silicon Photonics XIII, 105370M (14 March 2018); doi: 10.1117/12.2291633
Show Author Affiliations
Francesco Manegatti, Ctr. de Nanosciences et de Nanotechnologies (France)
Dimitrios Fitsios, Ctr. de Nanosciences et de Nanotechnologies (France)
Dorian Sanchez, Ctr. de Nanosciences et de Nanotechnologies (France)
Rama Raj, Ctr. de Nanosciences et de Nanotechnologies (France)
Fabrice Raineri, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris 7-Diderot (France)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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