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Proceedings Paper

MOVPE-grown GaN-based tunnel junction and its application
Author(s): Tetsuya Takeuchi; Satoshi Kamiyama; Motoaki Iwaya; Isamu Akasaki
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, ; doi: 10.1117/12.2291629
Show Author Affiliations
Tetsuya Takeuchi, Meijo Univ. (Japan)
Satoshi Kamiyama, Meijo Univ. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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