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Proceedings Paper

ZnO nanostructures for organometallic halide perovskite solar cells
Author(s): Ho Won Tam; Fangzhou Liu; Yushu Wang; Wei Chen; Tik Lun Leung; Aleksandra B. Djurišić; Alan Man Ching Ng; Wai Kin Chan; Jinyao Tang
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Paper Abstract

ZnO is considered a potential alternative of TiO2 for electron transport materials of perovskite solar cells due to its relatively high electron mobility and the ease of low temperature solution-processing. Nevertheless, ZnO-based perovskite devices usually exhibit inferior device performance and stability compared to TiO2 based devices due to the defect states at ZnO/perovskite interface. In this study, an ultrathin TiO2 layer by ALD is applied to ZnO nanostructures, and its effect on device performance is investigated. The results indicate that TiO2 ultrathin layer can effectively passivate the surface of ZnO nanostructures, resulting in enhanced device performance.

Paper Details

Date Published: 23 February 2018
PDF: 9 pages
Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332Q (23 February 2018); doi: 10.1117/12.2291595
Show Author Affiliations
Ho Won Tam, The Univ. of Hong Kong (Hong Kong, China)
Fangzhou Liu, The Univ. of Hong Kong (Hong Kong, China)
Yushu Wang, The Univ. of Hong Kong (Hong Kong, China)
Wei Chen, The Univ. of Hong Kong (Hong Kong, China)
South Univ. of Science and Technology (China)
Tik Lun Leung, The Univ. of Hong Kong (Hong Kong, China)
Aleksandra B. Djurišić, The Univ. of Hong Kong (Hong Kong, China)
Alan Man Ching Ng, Southern Univ. of Science and Technology (China)
Wai Kin Chan, The Univ. of Hong Kong (Hong Kong, China)
Jinyao Tang, The Univ. of Hong Kong (Hong Kong, China)


Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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