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Proceedings Paper

Energy transfer processes in semiconductors doped with transition metals and rare-earth elements
Author(s): Victor I. Sokolov
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Paper Abstract

In the paper energy states of structured isoelectronic impurities of transition metals and rare earth elements, the donor and acceptor excitons (DE, AE) of 3d and 4f impurities, the role of DE, AE of 3d and 4f impurities in an energy transfer from the matrix to impurities are discussed. It is shown that structured impurities may be classified as 'open' and 'closed' isoelectronic impurities. The number of electrons in the 3d or 4f shells is changed at $HBAR(omega) < Eg for the open impurities and is not changed for closed impurities. The structure of energy levels generated by 3d and 4f impurities in a forbidden gap, the properties of DE and AE of these impurities and energy transfer mechanisms from the matrix to an impurity (capture of carriers into 3d or 4f shells for open impurities and auger process for closed impurities) are essentially distinguished for two kinds of structured isoelectronic impurities. For the closed impurities a model is discussed in which frame the spectra of electroabsorption, photoluminescence, cathodeluminescence and the intracenter photoconductivity are described.

Paper Details

Date Published: 3 January 1996
PDF: 11 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229157
Show Author Affiliations
Victor I. Sokolov, Institute of Metal Physics (Russia)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions
Alexander I. Ryskin; V. F. Masterov, Editor(s)

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