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Proceedings Paper

Electroluminescence and excitation mechanism of erbium ions in erbium-doped crystalline silicon
Author(s): Mikhail S. Bresler; Oleg B. Gusev; M. I. Macoviichuk; Petr E. Pak; Evgenii O. Parshin; Elena I. Shek; Nikolai A. Sobolev; Irina N. Yassievich; B. P. Zakharchenya
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Paper Abstract

Electroluminescence (EL) of photodiodes fabricated from erbium-implanted silicon is studied at direct bias of p-n junction. A correlation between the intensities of EL of free excitons and erbium ions is found in dependence on pumping current. A model of f-shell excitation of optically active erbium ions is proposed basing on the assumption that the excitation of erbium ions occurs via capture of free excitons on neutral donor formed by erbium-oxygen complex with a subsequent auger-excitation of f-shell of erbium ion during recombination of a bound exciton. The model proposed permits us to described the experimental results.

Paper Details

Date Published: 3 January 1996
PDF: 4 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229156
Show Author Affiliations
Mikhail S. Bresler, A.F. Ioffe Physico-Technical Institute (Russia)
Oleg B. Gusev, A.F. Ioffe Physico-Technical Institute (Russia)
M. I. Macoviichuk, A.F. Ioffe Physico-Technical Institute (Russia)
Petr E. Pak, A.F. Ioffe Physico-Technical Institute (Russia)
Evgenii O. Parshin, Institute of Microelectronics (Russia)
Elena I. Shek, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai A. Sobolev, A.F. Ioffe Physico-Technical Institute (Russia)
Irina N. Yassievich, A.F. Ioffe Physico-Technical Institute (Russia)
B. P. Zakharchenya, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions
Alexander I. Ryskin; V. F. Masterov, Editor(s)

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