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Proceedings Paper

Luminescent rare-earth complexes in ion-implanted GaAs
Author(s): V. M. Konnov; T. V. Larikova; N. N. Loyko; V. A. Dravin; V. V. Ushakov; A. A. Gippius
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Paper Abstract

Interaction of rare earth element Yb with oxygen and chalcogenide (S, Se, Te) co-dopants in thin ion-implanted GaAs layers was found to produce efficient luminescence complexes Yb+O+S/Se/Te with systematic increase of transition energy with the increase of chalcogenide atom size and decrease of participating phonon energy with the increase of the atom mass.

Paper Details

Date Published: 3 January 1996
PDF: 7 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229155
Show Author Affiliations
V. M. Konnov, P.N. Lebedev Physical Institute (Russia)
T. V. Larikova, P.N. Lebedev Physical Institute (Russia)
N. N. Loyko, P.N. Lebedev Physical Institute (Russia)
V. A. Dravin, P.N. Lebedev Physical Institute (Russia)
V. V. Ushakov, P.N. Lebedev Physical Institute (Russia)
A. A. Gippius, P.N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions
Alexander I. Ryskin; V. F. Masterov, Editor(s)

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