Share Email Print
cover

Proceedings Paper

Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon
Author(s): Mikhail S. Bresler; Oleg B. Gusev; V. K. Kudoyarova; A. N. Kuznetsov; Petr E. Pak; E. I. Terukov; Irina N. Yassievich; B. P. Zakharchenya
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Photoluminescence of erbium-doped hydrogenated amorphous silicon was observed and compared with that of crystalline erbium-doped silicon. It is shown that a-Si:H:Er exhibits efficient room-temperature photoluminescence at 1.537 micrometer which is as strong as the emission from optimized c-Si:Er at 2 K. Practically no temperature quenching of the emission intensity in the range 2 - 300 K is observed. Saturation of erbium luminescence on increase of excitation level occurs at higher intensities of pumping beam than in c-Si:Er indicating shorter radiation lifetime of erbium ions.

Paper Details

Date Published: 3 January 1996
PDF: 5 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229154
Show Author Affiliations
Mikhail S. Bresler, A.F. Ioffe Physico-Technical Institute (Russia)
Oleg B. Gusev, A.F. Ioffe Physico-Technical Institute (Russia)
V. K. Kudoyarova, A.F. Ioffe Physico-Technical Institute (Russia)
A. N. Kuznetsov, A.F. Ioffe Physico-Technical Institute (Russia)
Petr E. Pak, A.F. Ioffe Physico-Technical Institute (Russia)
E. I. Terukov, A.F. Ioffe Physico-Technical Institute (Russia)
Irina N. Yassievich, A.F. Ioffe Physico-Technical Institute (Russia)
B. P. Zakharchenya, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions

© SPIE. Terms of Use
Back to Top