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Proceedings Paper

Two novel mechanisms of f-f-luminescence resonance excitation in semiconductors
Author(s): Georgy G. Zegrya; V. F. Masterov
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Paper Abstract

Two novel mechanisms of f-f-luminescence excitation in semiconductors doped by rare-earth elements have been proposed. The first mechanism is concerned with doping a heterostructure with quantum wells. The second one occurs when a quantizing magnetic field is applied to a doped semiconductor. It is shown that in both cases the Coulomb excitation process of the f- electron on the impurity atom by an electron-hole pair from semiconductor is of resonance nature. In this case the f-f-radiation excitation is shown to be several orders of magnitude greater in efficiency.

Paper Details

Date Published: 3 January 1996
PDF: 6 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229150
Show Author Affiliations
Georgy G. Zegrya, A. F. Ioffe Physico-Technical Institute (Russia)
V. F. Masterov, State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions
Alexander I. Ryskin; V. F. Masterov, Editor(s)

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