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Proceedings Paper

Quasi-vacancy model for impurity centers with partially filled d- and f-shells
Author(s): N. P. Ilyin; V. F. Masterov
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Paper Abstract

It is shown that quasi-vacancy model can be derived using one-electron Green's function method which provides a realistic two-band structure of a semiconductor. This model provides a suitable basis for calculation of the impurity centers which is hard to qualify in terms of purely 'deep' or purely 'shallow' levels, such as impurity centers with partially filled d- and f- shells.

Paper Details

Date Published: 3 January 1996
PDF: 9 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229149
Show Author Affiliations
N. P. Ilyin, State Technical Univ. (Russia)
V. F. Masterov, State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions

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