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Proceedings Paper

New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing
Author(s): Kazuya Hirata
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Paper Abstract

SiC is highly anticipated as the material to be used in the next generation of power devices. However, due to its high rigidity, it is difficult to process, has a low throughput in the wafer production process, and has a high cost. In order to solve these issues, we have developed the KABRA process – a new wafer-production process which uses laser processing technology – and have devised fully-automatic equipment called “KABRA!zen,” which enables the mass production of SiC wafers. KABRA!zen achieves approximately twice the throughput and one-third the material loss of the conventional processes.

Paper Details

Date Published: 19 February 2018
PDF: 6 pages
Proc. SPIE 10520, Laser-based Micro- and Nanoprocessing XII, 1052003 (19 February 2018); doi: 10.1117/12.2291458
Show Author Affiliations
Kazuya Hirata, DISCO Corp. (Japan)

Published in SPIE Proceedings Vol. 10520:
Laser-based Micro- and Nanoprocessing XII
Udo Klotzbach; Kunihiko Washio; Rainer Kling, Editor(s)

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