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AlGaAs-based optically pumped semiconductor lasers
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Paper Abstract

The most technologically mature optically pumped semiconductor lasers (OPSL) are based on InGaAs quantum wells (QW) for emission in the 900-1200 nm range. The low wavelength boundary is set by both the bandgap of InGaAs and the most common pump wavelength of 808 nm. To extend the wavelength coverage into 700 – 900 nm, a different QW system and a different pump wavelength are needed. In this work, we present the progress and result in the development of AlGaAs-based OPSL.

Paper Details

Date Published: 15 February 2018
PDF: 6 pages
Proc. SPIE 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII, 105150E (15 February 2018); doi: 10.1117/12.2291082
Show Author Affiliations
Yanbo Bai, Coherent, Inc. (United States)
Zuntu Xu, Coherent, Inc. (United States)
Yong Lin, Coherent, Inc. (United States)
Jeffrey Wisdom, Coherent, Inc. (United States)
Christian Scholz, Coherent, Inc. (United States)
Eli Weiss, Coherent, Inc. (United States)
Juan Chilla, Coherent, Inc. (United States)
Andreas Diening, Coherent, Inc. (United States)

Published in SPIE Proceedings Vol. 10515:
Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII
Juan L. Chilla, Editor(s)

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