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Proceedings Paper

Incorporating structural analysis in a quantum dot Monte-Carlo model
Author(s): I. M. E. Butler; Wei Li; S. A. Sobhani; N. Babazadeh; I. M. Ross; K. Nishi; K. Takemasa; M. Sugawara; Negin Peyvast; D. T. D. Childs; R. A. Hogg
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Paper Abstract

We simulate the shape of the density of states (DoS) of the quantum dot (QD) ensemble based upon size information provided by high angle annular dark field scanning transmission electron microscopy (HAADF STEM). We discuss how the capability to determined the QD DoS from micro-structural data allows a MonteCarlo model to be developed to accurately describe the QD gain and spontaneous emission spectra. The QD DoS shape is then studied, with recommendations made via the effect of removing, and enhancing this size inhomogeneity on various QD based devices is explored.

Paper Details

Date Published: 19 February 2018
PDF: 8 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105530G (19 February 2018); doi: 10.1117/12.2291004
Show Author Affiliations
I. M. E. Butler, Univ. of Glasgow (United Kingdom)
Queen's Univ. Belfast (Ireland)
Wei Li, The Univ. of Sheffield (United Kingdom)
S. A. Sobhani, Univ. of Glasgow (United Kingdom)
N. Babazadeh, Univ. of Glasgow (United Kingdom)
I. M. Ross, The Univ. of Sheffield (United Kingdom)
K. Nishi, QD Laser, Inc. (Japan)
K. Takemasa, QD Laser, Inc. (Japan)
M. Sugawara, QD Laser, Inc. (Japan)
Negin Peyvast, The Univ. of Sheffield (United Kingdom)
D. T. D. Childs, Univ. of Glasgow (United Kingdom)
R. A. Hogg, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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