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Proceedings Paper

GeSn lasers for mid-infrared silicon photonics (Conference Presentation)
Author(s): Alexei Chelnokov; Nicolas Pauc; Jauris Aubin; Quang Minh Thai; Laurent Milord; Mathieu Bertrand; Alban Gassenq; Kevin Guilloy; Thomas Karl-Heinz Zabel; Hans Sigg; Jean-Michel Hartmann; Vincent Calvo; Vincent Reboud

Paper Abstract

At least four groups have demonstrated GeSn direct bandgap material and shown cryogenic temperature lasers under optical pumping. With up to 16% of Sn, our lasers operate up to 180K and lase up to wavelengths of 3.1 um. We will describe our efforts to reduce the threshold, increase the operating temperature, and evolve towards electrical pumping in these lasers.Thes efforts involve improvements of epi growth, electrical passivation, doping, heterostructures, strain control...

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10537, Silicon Photonics XIII, 105370S (14 March 2018); doi: 10.1117/12.2290687
Show Author Affiliations
Alexei Chelnokov, CEA-LETI (France)
Nicolas Pauc, CEA-INAC (France)
Jauris Aubin, CEA-LETI (France)
Quang Minh Thai, CEA-INAC (France)
Laurent Milord, CEA-LETI (France)
Mathieu Bertrand, CEA-LETI (France)
Alban Gassenq, CEA-INAC (France)
Kevin Guilloy, CEA-INAC (France)
Thomas Karl-Heinz Zabel, Paul Scherrer Institut (Switzerland)
Hans Sigg, Paul Scherrer Institut (Switzerland)
Jean-Michel Hartmann, CEA-LETI (France)
Vincent Calvo, CEA-INAC (France)
Vincent Reboud, CEA-LETI (France)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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