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Proceedings Paper

Large-signal capabilities of an optically injection-locked semiconductor laser using gain lever
Author(s): J.-M. Sarraute; K. Schires; S. LaRochelle; F. Grillot
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Paper Abstract

Directly-modulated lasers remain excellent candidates for the development of efficient and low-cost short communication links. While the modulation bandwidth of semiconductor lasers is inherently limited by the relaxation oscillations due carrier-photon interaction, it is possible to further enhance the modulation dynamics by using nonlinear architectures. Our recent studies has revealed the high potential of the optically injection-locked semiconductor laser operating under gain lever effect. Modulation bandwidth as large as 85 GHz namely four times larger than that of the free-running semiconductor laser has been unveiled. In this work, we numerically investigate the large-signal capabilities of this transmitter by evaluating eye diagrams and bit error rates. The results confirm its high potential for short communication links operating at high-speeds.

Paper Details

Date Published: 23 February 2018
PDF: 9 pages
Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105260F (23 February 2018); doi: 10.1117/12.2290649
Show Author Affiliations
J.-M. Sarraute, Univ. Paris-Saclay (France)
COPL, Univ. Laval (Canada)
K. Schires, Univ. Paris-Saclay (France)
S. LaRochelle, COPL, Univ. Laval (Canada)
F. Grillot, Univ. Paris-Saclay (France)
Ctr. for High Technology Materials, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 10526:
Physics and Simulation of Optoelectronic Devices XXVI
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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