Share Email Print

Proceedings Paper

Large-signal capabilities of an optically injection-locked semiconductor laser using gain lever
Author(s): J.-M. Sarraute; K. Schires; S. LaRochelle; F. Grillot
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Directly-modulated lasers remain excellent candidates for the development of efficient and low-cost short communication links. While the modulation bandwidth of semiconductor lasers is inherently limited by the relaxation oscillations due carrier-photon interaction, it is possible to further enhance the modulation dynamics by using nonlinear architectures. Our recent studies has revealed the high potential of the optically injection-locked semiconductor laser operating under gain lever effect. Modulation bandwidth as large as 85 GHz namely four times larger than that of the free-running semiconductor laser has been unveiled. In this work, we numerically investigate the large-signal capabilities of this transmitter by evaluating eye diagrams and bit error rates. The results confirm its high potential for short communication links operating at high-speeds.

Paper Details

Date Published: 23 February 2018
PDF: 9 pages
Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105260F (23 February 2018); doi: 10.1117/12.2290649
Show Author Affiliations
J.-M. Sarraute, Univ. Paris-Saclay (France)
COPL, Univ. Laval (Canada)
K. Schires, Univ. Paris-Saclay (France)
S. LaRochelle, COPL, Univ. Laval (Canada)
F. Grillot, Univ. Paris-Saclay (France)
Ctr. for High Technology Materials, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 10526:
Physics and Simulation of Optoelectronic Devices XXVI
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top