Share Email Print

Proceedings Paper

Experimental verification of layout physical verification of silicon photonics
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Silicon photonics have been approved as one of the best platforms for dense integration of photonic integrated circuits (PICs) due to the high refractive index contrast among its materials. Silicon on insulator (SOI) is a widespread photonics technology, which support a variety of devices for lots of applications. As the photonics market is growing, the number of components in the PICs increases which increase the need for an automated physical verification (PV) process. This PV process will assure reliable fabrication of the PICs as it will check both the manufacturability and the reliability of the circuit. However, PV process is challenging in the case of PICs as it requires running an exhaustive electromagnetic (EM) simulations. Our group have recently proposed an empirical closed form models for the directional coupler and the waveguide bends based on the SOI technology. The models have shown a very good agreement with both finite element method (FEM) and finite difference time domain (FDTD) solvers. These models save the huge time of the 3D EM simulations and can be easily included in any electronic design automation (EDA) flow as the equations parameters can be easily extracted from the layout. In this paper we present experimental verification for our previously proposed models. SOI directional couplers with different dimensions have been fabricated using electron beam lithography and measured. The results from the measurements of the fabricate devices have been compared to the derived models and show a very good agreement. Also the matching can reach 100% by calibrating certain parameter in the model.

Paper Details

Date Published: 2 March 2018
PDF: 6 pages
Proc. SPIE 10537, Silicon Photonics XIII, 105371O (2 March 2018); doi: 10.1117/12.2290644
Show Author Affiliations
Raghi S. El Shamy, The American Univ. in Cairo (Egypt)
Mohamed A. Swillam, The American Univ. in Cairo (Egypt)

Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

© SPIE. Terms of Use
Back to Top