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Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars
Author(s): S. Heinemann; S. D. McDougall; G. Ryu; L. Zhao; X. Liu; C. Holy; C.-L. Jiang; P. Modak; Y. Xiong; T. Vethake; S. G. Strohmaier; B. Schmidt; H. Zimer
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Paper Abstract

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Paper Details

Date Published: 19 February 2018
PDF: 9 pages
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140Y (19 February 2018); doi: 10.1117/12.2290638
Show Author Affiliations
S. Heinemann, TRUMPF Photonics (United States)
S. D. McDougall, TRUMPF Photonics (United States)
G. Ryu, TRUMPF Photonics (United States)
L. Zhao, TRUMPF Photonics (United States)
X. Liu, TRUMPF Photonics (United States)
C. Holy, TRUMPF Photonics (United States)
C.-L. Jiang, TRUMPF Photonics (United States)
P. Modak, TRUMPF Photonics (United States)
Y. Xiong, TRUMPF Photonics (United States)
T. Vethake, TRUMPF Photonics (United States)
S. G. Strohmaier, TRUMPF Laser GmbH (Germany)
B. Schmidt, TRUMPF Photonics (United States)
H. Zimer, TRUMPF Photonics (United States)


Published in SPIE Proceedings Vol. 10514:
High-Power Diode Laser Technology XVI
Mark S. Zediker, Editor(s)

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