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Proceedings Paper

Quasi-three level Nd:YLF fundamental and Raman laser operating under 872-nm and 880-nm direct diode pumping
Author(s): Niklaus U. Wetter; Allan Bereczki; João Pedro Fonseca Paes
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Paper Abstract

Nd:YLiF4 is the gain material of choice whenever outstanding beam quality or a birefringent gain material is necessary such as in certain applications for terahertz radiation or dual-frequency mode-locking. However, for high power CW applications the material is hampered by a low thermal fracture threshold. This problem can be mitigated by special 2D pump set-ups or by keeping the quantum defect to a minimum. Direct pumping into the upper laser level of Nd:YLiF4 is usually performed at 880 nm. For quasi-three level laser emission at 908 nm, direct pumping at this wavelength provides a high quantum defect of 0.97, which allows for very high CW pump powers. Although the direct pumping transition to the upper laser state at 872 nm has a slightly smaller quantum defect of 0.96, its pump absorption cross section along the c-axis is 50% higher than at 880 nm, leading to a higher absorption efficiency. In this work we explore, for the first time to our knowledge, 908 nm lasing under 872 nm diode pumping and compare the results with 880 nm pumping for quasicw and cw operation. By inserting a KGW crystal in the cavity, Raman lines at 990 nm and 972 nm were obtained for the first time from a directly pumped 908 nm Nd:YLF fundamental laser for both quasi-cw and cw conditions.

Paper Details

Date Published: 15 February 2018
PDF: 7 pages
Proc. SPIE 10511, Solid State Lasers XXVII: Technology and Devices, 105111S (15 February 2018); doi: 10.1117/12.2290444
Show Author Affiliations
Niklaus U. Wetter, Instituto de Pesquisas Energéticas e Nucleares (Brazil)
Allan Bereczki, Instituto de Pesquisas Energéticas e Nucleares (Brazil)
João Pedro Fonseca Paes, Instituto de Pesquisas Energéticas e Nucleares (Brazil)


Published in SPIE Proceedings Vol. 10511:
Solid State Lasers XXVII: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)

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